An Introduction to the Physics of Semiconductor Devices (The Oxford Series in Electrical and Computer Engineering) Book

An Introduction to the Physics of Semiconductor Devices provides a thorough yet concise introduction to the physical operation of semiconductor devices, mainly diodes, bipolar transistors, MOS and junction field effect transistors, as well as an overview of numerous other devices. It includes sufficient background physics for the book to be self-contained and easily understood by the first-time student. Taking a novel approach, Roulston keeps mathematics to a minimum while emphasizing the essential physical operation of each device. The author has successfully provided only the essential concepts, while still maintaining the necessary depth. An accompanying CD-ROM includes BIPOL3, a user-friendly software program that allows students to study the important physical characteristics of diodes, BJTs, and MOSFETs. This software allows the student to step beyond the idealized world and look at real devices. Chapter 1 features a survey of the basic circuit elements: diodes and transistors, with their associated simple single device circuit at the most elementary level. This chapter also provides an overview of semiconductor materials and devices. The physics background material of Chapter 1 is expanded in Chapter 2 to cover material properties and some general aspects of PN junctions. Chapter 3 covers various types of diodes, including both dc, small signal ac and transient characteristics of diodes. Specific diode types studied include the narrow base and PIN diodes, with only a brief reference to the wide base and P+NN+ structures; in addition, the metal semiconductor contact and the Schottky diode are included. In Chapter 4 the bipolar transistor is examined, using realistic approximations valid for most industrial BJTs, all important aspects of BJT characteristics, and introducing operations including dc, small signal ac and transient operation. Chapter 5 is devoted to MOSFET devices, presenting a study of the MOS system and the MOS capacitance, followed by a conventional treatment using the Shockley theory. Chapter 6 covers the JFET, deriving the general relationship between transconductance, channel transit time and input capacitance and paying special attention to the nature of the pinch-off in the 'short channel' device. Chapter 7 introduces the reader to various 'special purpose' semiconductor devices, mainly from a qualitative viewpoint. Finally, it is important for students studying the physics of semiconductor devices to know how the device is made and to be aware of fabrication technology and its limitations. Chapter 8 provides a short introduction to fabrication technology at a suitable level for a first text on devices. A comprehensive set of appendices covers in some detail additional material which the advanced (or curious) student may consult for further background. Appendices 1-6 cover basic quantum physics of semiconductor devices. The remaining appendices cover theoretical aspects of specific semiconductor devices. Instructors are able to abridge this material according to the time available; time notwithstanding, the material in the appendices may be utilized to cover some of the background theory in greater depth, provided the students are sufficiently advanced. The text is aimed at those students with no previous exposure to semiconductor devices. Only a first year physics course and a course on calculus including differential equations are assumed as prerequisites, as is an introductory course on basic electrical engineering topics. It is therefore designed primarily for use by second and third year students in electrical engineering, electronics or physics.Read More